Reduction of proximity effect in electron beam lithography by deposition of a thin film of silicon dioxide

We present a simple strategy to reduce the writing time of electron beam lithography (EBL) by using a highly sensitive Shipley's UV-5 resist while reducing proximity effects by depositing a thin film of silicon dioxide (SiO2) on silicon substrate. It was found that a simple insertion of a thin SiO2 film greatly reduced proximity effects, thereby providing enhanced resolution and better pattern fidelity. To support this conclusion, the bottom line width and sidewall slope of the developed pattern were analyzed for each substrate with different film thickness. ; This work was supported by the Grant-in-Aid for Next-Generation New Technology Development Programs from the Korea Ministry of Commerce, Industry and Energy (No. 10030046). This work was also supported in part by the Micro Thermal System Research Center of Seoul National University.