Design and Analysis of 2N4416 n channel JFET Single Stage Amplifier for large band width and low Voltage Gain

A bipolar junction transistor (BJT) is a current-controlled device, while a field-effect transistor (FET), is a voltage-controlled device, the bipolar transistor has two principal disadvantages. First, it has low input impedance because of the forward-biased emitter junction. Secondly, it has a considerable noise level. The field-effect transistor (FET) has a large input impedance which may be more than 100 megaohms, the FET is generally much less noisy than the ordinary or bipolar transistor. In this paper 2N4416 n channel JFET single-stage amplifier was designed, in order to analyze the circuit, important terms and main parameters were determined, the frequency response and bandwidth of the amplifier were also determined and discussed graphically using Multisim 14.2 simulator, the results characterized amplifier with large bandwidth and low voltage gain.