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Physical properties of voltage gated pores

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  • Additional Information
    • Contributors:
      Universitat de Barcelona; Universitat Politècnica de Catalunya. Departament de Física; Universitat Politècnica de Catalunya. BIOCOM-SC - Grup de Biologia Computacional i Sistemes Complexos
    • Publication Information:
      Preprint
    • Publication Information:
      Springer Science and Business Media LLC, 2018.
    • Publication Date:
      2018
    • Abstract:
      Experiments on single ionic channels have contributed to a large extent to our current view on the function of cell membrane. In these experiments the main observables are the physical quantities: ionic concentration, membrane electrostatic potential and ionic fluxes, all of them presenting large fluctuations. The classical theory of Goldman--Hodking--Katz assumes that an open channel can be well described by a physical pore where ions follow statistical physics. Nevertheless real molecular channels are active pores with open and close dynamical states. By skipping the molecular complexity of real channels, here we present the internal structure and calibration of two active pore models. These models present a minimum set of degrees of freedom, specifically ion positions and gate states, which follow Langevin equations constructed from an unique potential energy functional and by using standard rules of statistical physics. Numerical simulations of both models are implemented and the results show that they have dynamical properties very close to those observed in experiments of Na and K molecular channels. In particular a significant effect of the external ion concentration on gating dynamics is predicted, which is consistent with previous experimental observations. This approach can be extended to other channel types with more specific phenomenology.
      9 pages, 8 figures
    • File Description:
      application/pdf
    • ISSN:
      1434-6036
      1434-6028
    • Accession Number:
      10.1140/epjb/e2017-80569-5
    • Accession Number:
      10.48550/arxiv.1804.05775
    • Rights:
      Springer TDM
      CC BY NC ND
      arXiv Non-Exclusive Distribution
    • Accession Number:
      edsair.doi.dedup.....1c8f5a7296e5c0f4c5e81d8b215e6718