Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

Hydrogen ion passivation of multicrystalline silicon solar cells

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
Read More Add to Saved list
  • Additional Information
    • Contributors:
      Journal de Physique, Archives; Institut de Recherches Subatomiques (IReS); Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Cancéropôle du Grand Est-Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS)
    • Publication Information:
      EDP Sciences, 1987.
    • Publication Date:
      1987
    • Abstract:
      It has been recognized that hydrogen can be chosen to passivate the defects present in polycrystalline materials. Technically, the best approach is to use hydrogen ion implantation at low energy (0.5 to 5 keV) by means of a Kaufman or similar type ion source in order to reduce the processing time. For our multiple beam ion source, we have determined the effective concentration profile of the introduced hydrogen, the modification of the optical properties of the implanted wafers and the conditions under which two multicrystalline materials (POLYX and SILSO) will give the greatest improvement in solar cell performance.
    • File Description:
      application/pdf
    • ISSN:
      0035-1687
    • Accession Number:
      10.1051/rphysap:01987002207064900
    • Accession Number:
      edsair.doi.dedup.....307f3aa8bd046d74e78f6d50579cedd7