Energy of Crystal Lattice Thermal Oscillations in TlGaS2 Semiconductor Compound

This article presents the results of a study of the temperature dependences of the coefficients of thermal expansion and isothermal compressibility of the ternary compound TlGaS2. In the studied temperature range (80-400 K), no anomalies were found in the temperature dependences of these properties. The thermal expansion coefficient of the TlGaS2 semiconductor compound is calculated based on empirical formulas including Debye temperature and Debye functions, and the average energy of the crystal lattice is calculated and its temperature dependence is tabulated. It was shown that the energy of the crystal lattice depends on the degree of anharmonicity of the oscillations.