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Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO2 substrates

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  • Additional Information
    • Contributors:
      Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
    • Publication Information:
      Beilstein Institut, 2024.
    • Publication Date:
      2024
    • Abstract:
      Graphene is one of the most extensively studied 2D materials, exhibiting extraordinary mechanical and electronic properties. Although many years have passed since its discovery, manipulating single graphene layers is still challenging using standard resist-based lithography techniques. Recently, it has been shown that it is possible to etch graphene directly in water-assisted processes using the so-called focused electron-beam-induced etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene nanopatterning, we have found significant morphological changes induced in the SiO2 substrate even at low electron dose values (2). We demonstrate that graphene etching and topographical changes in SiO2 substrates can be controlled via electron beam parameters such as dwell time and dose.
    • File Description:
      application/pdf
    • ISSN:
      2190-4286
    • Accession Number:
      10.3762/bjnano.15.18
    • Rights:
      CC BY
      URL: http://creativecommons.org/licenses/by/4.0/This is an open access article licensed under the terms of the Beilstein-Institut Open Access License Agreement (http://www.beilstein-journals.org/bjnano/terms/terms), which is identical to the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0 (http://creativecommons.org/licenses/by/4.0/) ). The reuse of material under this license requires that the author(s), source and license are credited. Third-party material in this article could be subject to other licenses (typically indicated in the credit line), and in this case, users are required to obtain permission from the license holder to reuse the material.
    • Accession Number:
      edsair.doi.dedup.....c19db11f8fa15a46fcfe6ff25fff5f9f