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Threshold for Induction Motor Terminal Transient Peak Voltage with Fast Switching Inverters

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Author(s): Anders Blomberg; Martin Lindahl; Hans-Peter Nee; Erik Velander
Source:
2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).
Subject Terms:
Semiconducting silicon compounds; Materials science; Switching speed; 020209 energy; Silicon carbide; 02 engineering and technology; Silicon Carbide (SiC; Cables; Electric inverters; Adjustable speed drives; Transients; Switching time; chemistry.chemical_compound; 0202 electrical engineering, electronic engineering, information engineering; Variable speed drives; Power semiconductor device; Annan elektroteknik och elektronik; Adjustable-speed drive; Induction motor; Silicon carbides (SiC); Traction applications; Additional filters; Other Electrical Engineering, Electronic Engineering, Information Engineering; Power semiconductors; business.industry; 020208 electrical & electronic engineering; Bipolar junction transistor; Industrial applications; Insulated gate bipolar transistors (IGBT); Rail vehicles; Terminal voltages; Insulated-gate bipolar transistor; Wide band gap semiconductors; Rail vehicle; Induction motors; chemistry; Asynchronous motor; Insulation; Switching; Industrial application; Optoelectronics; Traction application; Transient (oscillation); business; Adjustable speed drive
Online Access:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff7adec80d575c5f751907133ac9b13d
https://doi.org/10.23919/epe.2019.8914765

Additional Information
- Publication Information:
  IEEE, 2019.
- Publication Date:
  2019
- Abstract:
  Concerns have been raised that motor voltages might be very high if the fast switching characteristics of silicon carbide (SiC) are to be utilized. For this reason, the magnitude of the terminal voltage of an induction motor is investigated when fed from a fast switching SiC inverter through a long cable. It is found that the main insulation demand for the SiC case is only increased by 5 % compared to the silicon insulated-gate bipolar transistor (IGBT) case. This indicates that additional filters may not be necessary in applications with long cables where silicon IGBTs are replaced by fast switching SiC power semiconductors. QC 20200316
- File Description:
  application/pdf
- Accession Number:
  10.23919/epe.2019.8914765
- Rights:
  OPEN
- Accession Number:
  edsair.doi.dedup.....ff7adec80d575c5f751907133ac9b13d

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