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The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes

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  • Additional Information
    • Contributors:
      Nanophysique et Semiconducteurs (NPSC); PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS); Institut de Recherche Interdisciplinaire de Grenoble (IRIG); Direction de Recherche Fondamentale (CEA) (DRF (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA); Matériaux, Rayonnements, Structure (NEEL - MRS); Institut Néel (NEEL); Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP); Université Grenoble Alpes (UGA); Nanophysique et Semiconducteurs (NEEL - NPSC); Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA); Modélisation et Exploration des Matériaux (MEM); Institut Universitari de Ciencia dels Materials (ICMUV); Universitat de València = University of Valencia (UV)
    • Publication Information:
      HAL CCSD
      Institute of Physics
    • Publication Date:
      2021
    • Collection:
      Université Grenoble Alpes: HAL
    • Abstract:
      International audience ; The spontaneous growth of GaN nanowires in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the nanowire top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN 2 nanowires. In the case of AlN nanowires, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN nanotubes.
    • Accession Number:
      10.1088/1361-6528/abc780
    • Online Access:
      https://hal.science/hal-03429491
      https://hal.science/hal-03429491v1/document
      https://hal.science/hal-03429491v1/file/Growth_mechanisms_of_nanowires_FINAL%20revised%20AB%20.pdf
      https://doi.org/10.1088/1361-6528/abc780
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • Accession Number:
      edsbas.13E6E539