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Ultra-thin supported lipid monolayer with unprecedented mechanical and dielectric properties

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  • Additional Information
    • Contributors:
      Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Bio-Micro-Electro-Mechanical Systems - IEMN (BIOMEMS - IEMN); Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF); Centre Interdisciplinaire de Nanoscience de Marseille (CINaM); Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS); ANR-10-SATT-0002,SATT SUD-EST,SATT SUD-EST (EX PACA CORSE)(2010); ANR-16-JTIC-0003,SENCEI,Capteur de type FET ultra-sensible et versatile: Application à la détection du césium(2016)
    • Publication Information:
      CCSD
      Wiley
    • Publication Date:
      2018
    • Collection:
      Aix-Marseille Université: HAL
    • Abstract:
      International audience ; The development of ultra-thin dielectrics for low power electronics operations, flexible and printed electronics, and field effect transistors based sensors is still a challenge. Here monolayers of engineered lipids supported on silicon are reported presenting exceptional mechanical and dielectric properties. The lipid monolayers are stabilized using a simple procedure based on a two-stage reticulation process in both their aliphatic chains and their head-group. With a 2 thickness lower than 3 nm, such layers are demonstrated to offer exceptional mechanical and dielectric stability with unprecedented low leakage current and dielectric strength. Surprisingly, the mechanical and dielectric pressures required to rupture/breakdown the monolayers are shown to be similar. These results suggest the presence of a strong correlation between mechanical and dielectric properties, as well as between the mechanisms of rupture and breakdown.
    • Accession Number:
      10.1002/adfm.201801024
    • Online Access:
      https://hal.science/hal-01774078
      https://hal.science/hal-01774078v1/document
      https://hal.science/hal-01774078v1/file/Manuscript-R1.pdf
      https://doi.org/10.1002/adfm.201801024
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • Accession Number:
      edsbas.96E275FE