Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

Yb-doped zinc tin oxide thin film and its application to Cu(InGa)Se2 solar cells

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
  • Additional Information
    • Contributors:
      YeungNam University; Department of Environmental Engineering; Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube); École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg); Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE); Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique; Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS); Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS); Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE); Yeungnam University South Korea
    • Publication Information:
      HAL CCSD
      Elsevier
    • Publication Date:
      2020
    • Collection:
      Inserm: HAL (Institut national de la santé et de la recherche médicale)
    • Abstract:
      International audience ; The use of rare earth elements with semiconductor materials has attracted immense interest due to their unique properties. In this study, we investigated the characteristics of an ytterbium (Yb)-doped zinc tin oxide (Yb:ZTO) thin film and its application as a potential down-converter of Cu(InGa)Se 2 (CIGS) thin-film solar cells. Yb:ZTO thin films were deposited by reactive sputtering of Zn and Sn metal with oxygen flow. A few pieces of Yb were embedded in a Zn metal target; thus Yb elements were supplied during Zn sputtering. The relative composition of Zn and Sn was controlled by changing the sputtering power (10-70 W) of Sn, in relation to the fixed sputtering power for Zn (70 W). In addition, the substrate temperature was varied from room temperature to 400°C. It was confirmed that a smaller amount of Sn with lower sputtering power led to more incorporation of Yb into ZTO. X-ray photoelectron spectroscopy analysis confirmed the incorporation of Yb into ZTO, and photoluminescence measurement demonstrated Yb emission. Grazing incidence X-ray diffraction indicated the shift of ZTO emission peaks induced by the difference in the composition of Zn and Sn. Finally, CIGS solar cells with an Yb:ZTO layer were fabricated. The results suggested that cells with the highest Yb photoluminescence emission showed the highest short-circuit current density and cell efficiency.
    • Relation:
      hal-02550925; https://cnrs.hal.science/hal-02550925; https://cnrs.hal.science/hal-02550925/document; https://cnrs.hal.science/hal-02550925/file/Proof_JALCOM_152360-Park.pdf
    • Accession Number:
      10.1016/j.jallcom.2019.152360
    • Online Access:
      https://cnrs.hal.science/hal-02550925
      https://cnrs.hal.science/hal-02550925/document
      https://cnrs.hal.science/hal-02550925/file/Proof_JALCOM_152360-Park.pdf
      https://doi.org/10.1016/j.jallcom.2019.152360
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • Accession Number:
      edsbas.B8BA3132