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Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol
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- Author(s): Sallet, V.; Thiandoume, C; Rommeluere, J.F; Lusson, A.; Riviere, A; Rivière, J.P; Gorochov, O.; Triboulet, R.; Muñoz-Sanjosé, V.
- Source:
ISSN: 0167-577X ; Materials Letters ; https://hal.science/hal-02397872 ; Materials Letters, 2002, 53 (1-2), pp.126-131. ⟨10.1016/S0167-577X(01)00558-4⟩.
- Subject Terms:
- Document Type:
article in journal/newspaper
- Language:
English
- Additional Information
- Contributors:
Groupe d'Etude de la Matière Condensée (GEMAC); Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS); Laboratoire de métallurgie physique UMR 6630 (LMP Poitiers ); Université de Poitiers = University of Poitiers (UP)-Centre National de la Recherche Scientifique (CNRS); Laboratoire de Physique des Solides (LPS); Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS); Institut de génétique humaine (IGH); Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Institut Universitari de Ciencia dels Materials (ICMUV); Universitat de València = University of Valencia (UV)
- Publication Information:
CCSD
Elsevier
- Publication Date:
2002
- Collection:
Université de Poitiers: Publications de nos chercheurs.ses (HAL)
- Abstract:
International audience
- Accession Number:
10.1016/S0167-577X(01)00558-4
- Online Access:
https://hal.science/hal-02397872
https://hal.science/hal-02397872v1/document
https://hal.science/hal-02397872v1/file/publi%20mat%20lett_text-MLBLUE3391.pdf
https://doi.org/10.1016/S0167-577X(01)00558-4
- Rights:
info:eu-repo/semantics/OpenAccess
- Accession Number:
edsbas.C9EA7FB4
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