Effects of substrate bias and temperature during titanium sputter-deposition on the phase formation in TiSi2

KTH, Mikroelektronik och informationsteknik, IMIT 2002

Lundqvist, N.
Aberg, J.
Nygren, S.
Bjormander, C. A.
Zhang, Shi-Li

The formation of titanium disilicide (TiSi2,) from Ti deposited using ionized metal plasma under different deposition conditions has been investigated. It is shown that deposition at elevated substrate temperature (450degreesC) enhances the formation of the low-resistivity C54 TiSi2, especially in patterned narrow lines. Grain-boundary footprint pictures obtained by atomic force microscopy indicate a larger grain-size distribution for the films deposited at higher substrate temperature. Deposition under substrate bias resulted in reduced contact resistivity. However, the use of substrate bias results in increased probability of bridging of silicide over the isolating spacers.
QC 20100525

titanium disilicide; TiSi2; substrate bias; substrate temperature; ionized metal plasma; collimated sputtering; phase transition; contact resistance; linewidth effect; ti thin-films; transformation temperature; integrated-circuits; enhanced formation; silicide; disilicide; c54-tisi2; mechanism; nucleation; morphology; Article in journal; info:eu-repo/semantics/article; text

10.1016.S0167-9317(01)00597-4

Open access content. Open access content
info:eu-repo/semantics/restrictedAccess

English

UPE oai:DiVA.org:kth-21248
doi:10.1016/S0167-9317(01)00597-4
ISI:000173194900025
Scopus 2-s2.0-0036132768
1235059951

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