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METHOD OF MANUFACTURING A PHOTOELECTRONIC DEVICE

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  • Publication Date:
    February 4, 2010
  • Additional Information
    • Document Number:
      20100029035
    • Appl. No:
      12/511812
    • Application Filed:
      July 29, 2009
    • Abstract:
      This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.
    • Inventors:
      Chin, Yu-Ling (Hsinchu, TW); Jou, Li-Pin (Hsinchu, TW); Yang, Yu-Chih (Hsinchu, TW); Yang, Yu-Cheng (Hsinchu, TW); Chen, Wei-Shou (Hsinchu, TW); Kuo, Cheng-Ta (Hsinchu, TW)
    • Claim:
      1. A method for manufacturing a photoelectronic device, comprising: providing a semiconductor stack layer; forming a first metal adhesive by a printing technology on the semiconductor stack layer; and providing a first energy on the first metal adhesive to form a first electrode, wherein an ohmic contact is formed between the first electrode and the semiconductor stack layer.
    • Claim:
      2. The method for manufacturing a photoelectronic device according to claim 1, further including the steps of: forming a second metal adhesive by a printing technology under the semiconductor stack layer; and providing a second energy on the second metal adhesive to form a second electrode, wherein an ohmic contact is formed between the second electrode and the semiconductor stack layer.
    • Claim:
      3. The method for manufacturing a photoelectronic device according to claim 2, further providing a substrate between the second electrode and the semiconductor stack layer.
    • Claim:
      4. The method for manufacturing a photoelectronic device according to claim 1, further including the steps of: etching a portion of the surface of the semiconductor stack layer; forming a second metal adhesive by a printing technology on the etched surface of the semiconductor stack layer; and providing a second energy on the second metal adhesive to form a second electrode, wherein an ohmic contact is formed between the second electrode and the etched surface of the semiconductor stack layer.
    • Claim:
      5. The method for manufacturing a photoelectronic device according to claim 1, wherein the material of the semiconductor stack layer comprising at least one or more elements selected from the group consisting of gallium, aluminum, indium, arsenic, phosphorous, nitrogen, and silicon.
    • Claim:
      6. The method for manufacturing a photoelectronic device according to claim 1, wherein the semiconductor stack layer including at least a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer from up to down.
    • Claim:
      7. The method for manufacturing a photoelectronic device according to claim 1, wherein the semiconductor stack layer including at least one p-n junction which is stacked by a first conductive type semiconductor layer and a second conductive type semiconductor layer.
    • Claim:
      8. The method for manufacturing a photoelectronic device according to claim 1, wherein the semiconductor stack layer further including a tunnel junction structure.
    • Claim:
      9. The method for manufacturing a photoelectronic device according to claim 2, wherein the first metal adhesive and the second metal adhesive comprising metal particles and solvent.
    • Claim:
      10. The method for manufacturing a photoelectronic device according to claim 9, wherein the metal particles are at least one material selected from the group consisting of gold, silver, copper, molybdenum, nickel, zinc, tin, aluminum, beryllium, germanium, palladium, titanium, platinum, and the alloys thereof.
    • Claim:
      11. The method for manufacturing a photoelectronic device according to claim 9, wherein the energy is heat.
    • Claim:
      12. The method for manufacturing a photoelectronic device according to claim 4, wherein the second metal adhesive comprising metal particles and solvent.
    • Claim:
      13. The method for manufacturing a photoelectronic device according to claim 12, wherein the metal particles are selected from at least one material of the group consisting of gold, silver, copper, molybdenum, nickel, zinc, tin, aluminum, beryllium, germanium, palladium, titanium, platinum and the alloys thereof.
    • Claim:
      14. The method for manufacturing a photoelectronic device according to claim 4, wherein the energy is heat.
    • Claim:
      15. The method for manufacturing a photoelectronic device according to claim 1, further including a step of forming an anti-reflector layer on the semiconductor stack layer.
    • Claim:
      16. The method for manufacturing a photoelectronic device according to claim 3, wherein the material of the substrate is selected from silicon, silicon carbide, zinc oxide, gallium arsenic, gallium phosphide, germanium conductive materials or sapphire, glass, diamond insulation materials.
    • Current U.S. Class:
      438/72
    • Current International Class:
      01
    • Accession Number:
      edspap.20100029035