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BIPOLAR JUNCTION TRANSISTOR WITH NARROW LEDGE BETWEEN EMITTER AND BASE CONTACT

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  • Publication Date:
    March 6, 2025
  • Additional Information
    • Document Number:
      20250081555
    • Appl. No:
      18/826055
    • Application Filed:
      September 05, 2024
    • Abstract:
      A bipolar junction transistor has a collector over a substrate and a base structure over the collector, the base including a III-V ternary semiconductor alloy, the base having a base contact formed thereon. An emitter is over the base structure, and a ledge between the emitter structure and the base contact is 0.3 μm or less.
    • Claim:
      1. A bipolar junction transistor comprising: a substrate; a collector structure over the substrate; a base structure over the collector structure, the base structure including a III-V ternary semiconductor alloy, the base structure having a base contact formed thereon; and an emitter structure over the base structure, a ledge between the emitter structure and the base contact being 0.3 μm or less.
    • Claim:
      2. The bipolar junction transistor of claim 1 wherein the collector structure includes a gallium arsenide (GaAs) layer.
    • Claim:
      3. The bipolar junction transistor of claim 1 wherein the III-V ternary semiconductor alloy of the base structure is gallium arsenide antimonide (GaAsSb) or indium gallium arsenide (InGaAs).
    • Claim:
      4. The bipolar junction transistor of claim 1 wherein the emitter structure includes an indium gallium phosphide (InGaP) layer.
    • Claim:
      5. The bipolar junction transistor of claim 1 wherein the ledge between the emitter structure and the base contact is in a range of 0.04 μm and 0.3 μm.
    • Claim:
      6. The bipolar junction transistor of claim 1 wherein the ledge between the emitter structure and the base contact is in a range of 0.14 μm and 0.3 μm.
    • Claim:
      7. The bipolar junction transistor of claim 1 wherein the ledge between the emitter structure and the base contact is in a range of 0.1 μm to 0.2 μm.
    • Claim:
      8. The bipolar junction transistor of claim 1 wherein a thickness of the base structure is in a range of 100 Å to 500 Å.
    • Claim:
      9. The bipolar junction transistor of claim 1 wherein a thickness of the base structure is in a range of 200 Å to 400 Å.
    • Claim:
      10. The bipolar junction transistor of claim 1 further comprising a sub-collector between the substrate and the collector structure.
    • Claim:
      11. A bipolar junction transistor comprising: a substrate; a collector structure over the substrate; a base structure over the collector, the base structure including a III-V ternary semiconductor alloy, the base structure having a base contact formed thereon, a thickness of the base structure being 500 Å or less; and an emitter structure over the base structure, a ledge between the emitter structure and the base contact being 0.5 μm or less.
    • Claim:
      12. The bipolar junction transistor of claim 11 wherein the collector structure includes a gallium arsenide (GaAs) layer.
    • Claim:
      13. The bipolar junction transistor of claim 11 wherein the III-V ternary semiconductor alloy of the base structure is gallium arsenide antimonide (GaAsSb) or indium gallium arsenide (InGaAs).
    • Claim:
      14. The bipolar junction transistor of claim 11 wherein the emitter structure includes an indium gallium phosphide (InGaP) layer.
    • Claim:
      15. The bipolar junction transistor of claim 11 wherein the ledge between the emitter structure and the base contact being in a range of 0.04 μm and 0.5 μm.
    • Claim:
      16. The bipolar junction transistor of claim 11 wherein the ledge between the emitter structure and the base contact being in a range of 0.04 μm and 0.3 μm.
    • Claim:
      17. The bipolar junction transistor of claim 11 wherein the ledge between the emitter structure and the base contact being in a range of 0.1 μm to 0.3 μm.
    • Claim:
      18. The bipolar junction transistor of claim 11 wherein a thickness of the base structure is in a range of 100 Å to 500 Å.
    • Claim:
      19. A radio frequency device comprising: a bipolar junction transistor power amplifier having a collector, a base structure over the collector, and an emitter over the base structure, the base structure including a III-V ternary semiconductor alloy, the base structure having a base contact formed thereon; and an emitter structure over the base structure, a ledge between the emitter structure and the base contact being 0.3 μm or less; and an antenna coupled to the bipolar junction transistor power amplifier.
    • Claim:
      20. The radio frequency device of claim 19 wherein the collector structure includes a gallium arsenide (GaAs) layer, the III-V ternary semiconductor alloy of the base structure is gallium arsenide antimonide (GaAsSb) or indium gallium arsenide (InGaAs), the emitter structure includes an indium gallium phosphide (InGaP) layer, and the ledge between the emitter structure and the base contact is in a range of 0.04 μm and 0.3 μm.
    • Current International Class:
      01; 01; 01; 01
    • Accession Number:
      edspap.20250081555