Simplified structure of two-terminal tandem solar cells with transparent conducting oxide junction material

12274,110

18/257812

December 13, 2021

A tandem photovoltaic structure including, from the rear face to the front face: a first SHJ solar cell comprising a first layer of P-type doped amorphous silicon and a substrate of N-type doped crystalline silicon, a junction layer, a second perovskite-type solar cell comprising an active layer and a second P-type layer, the junction layer being made of N-type TCO and being in direct contact either with the second P-type layer or with the first P-type layer, one amongst the first or second solar cell also comprising an N-type layer, the junction layer serving as an N-type layer in the other one amongst the first or second solar cell.

COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (Paris, FR); 3SUN S.R.L. (Catania, IT)

COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES (Paris, FR), 3SUN S.R.L. (Catania, IT)

1. A 2-terminal PIN-type tandem photovoltaic structure comprising, from the rear face to the front face: a first solar cell with a silicon heterojunction comprising a first P-type layer made of doped amorphous silicon and a substrate of N-type doped crystalline silicon disposed between a first layer of intrinsic amorphous silicon and a second layer of intrinsic amorphous silicon, a junction layer, a second perovskite-type cell comprising a second P-type layer, an active layer made of a perovskite material and an N-type layer, wherein the junction layer is made of a transparent conductive oxide, and wherein the junction layer is in direct physical contact with the second layer of intrinsic amorphous silicon of the first solar cell and with the second P-type layer of the second solar cell, the junction layer serving as an N-type layer in the first solar cell.

2. The tandem structure according to claim 1 , wherein the junction layer is made of ITO.

3. The tandem structure according to claim 1 , wherein the junction layer is made of AZO, ZnO, IWO, IZO, IZrO or SnO 2-x with x greater than 0 and strictly less than 2.

4. The tandem structure according to claim 1 , wherein the junction layer has a thickness from 2 to 30 nm and preferably between 2 nm and 15 nm.

5. The tandem structure according to claim 1 , wherein the junction layer has a conductivity higher than 10 S·cm −1 .

6. The tandem structure according to claim 1 , wherein the tandem structure comprises from the rear face to the front face: the first solar cell with the silicon heterojunction based on amorphous silicon and crystalline silicon comprising, from the rear face to the front face: the first P-type layer made of doped amorphous silicon, the first layer of intrinsic amorphous silicon, the substrate of N-doped crystalline silicon and the second layer of intrinsic amorphous silicon, the junction layer made of N-type TCO, the second perovskite-type solar cell comprising, from the junction material to the front face: the second P-type layer, made of PTAA or TFB, the active layer made of a perovskite material and the N-type layer made of SnO 2 or formed by a PCBM/SnO 2 bilayer.

7. The tandem structure according to claim 1 , wherein the perovskite material has the formula Cs x FA 1-x Pb(I 1-y Br y) 3 (with x<0.20; 0

10622409 April 2020 Kamino et al.
2018/0174761 June 2018 kamino et al.
2018/0175112 June 2018 Robinson et al.
2019/0221690 July 2019 Bush
2020/0313093 October 2020 Padture
107369767 November 2017
209016100 June 2019
111554764 August 2020
WO 2016/198898 December 2016
WO-2018057419 March 2018

International Search Report for PCT/FR2021/052295 dated Apr. 4, 2022. cited by applicant
Written Opinion for PCT/FR2021/052295 dated Apr. 4, 2022. cited by applicant
Shen et al. “In situ recombination junction between p-Si and TiO2 enables high-efficiency monolithic perovskite/Si tandem cells”, Science Advances, 2018; 4: eaau9711, pp. 1-12. cited by applicant
Zheng et al. “Large area efficient interface layer free monolithic perovskite/homo-junction-silicon tandem solar cell with over 20% efficiency”, Energy Environ. Sci., 2018, 11, 2432-2443. cited by applicant

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