Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

Vertically Processed GaInP/InP Tandem-Junction Nanowire Solar Cells

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
  • Additional Information
    • Contributors:
      Lund University, Profile areas and other strong research environments, Lund University Profile areas, LU Profile Area: Light and Materials, Lunds universitet, Profilområden och andra starka forskningsmiljöer, Lunds universitets profilområden, LU profilområde: Ljus och material, Originator; Lund University, Faculty of Engineering, LTH, LTH Profile areas, LTH Profile Area: Nanoscience and Semiconductor Technology, Lunds universitet, Lunds Tekniska Högskola, LTH profilområden, LTH profilområde: Nanovetenskap och halvledarteknologi, Originator; Lund University, Faculty of Science, Department of Physics, Lunds universitet, Naturvetenskapliga fakulteten, Fysiska institutionen, Originator; Lund University, Faculty of Science, Department of Physics, Solid State Physics, Lunds universitet, Naturvetenskapliga fakulteten, Fysiska institutionen, Fasta tillståndets fysik, Originator; Lund University, Profile areas and other strong research environments, Strategic research areas (SRA), NanoLund: Centre for Nanoscience, Lunds universitet, Profilområden och andra starka forskningsmiljöer, Strategiska forskningsområden (SFO), NanoLund: Centre for Nanoscience, Originator
    • Abstract:
      We present vertically processed photovoltaic devices based on GaInP/InP tandem-junction III-V nanowires (NWs), contacting approximately 3 million NWs in parallel for each device. The GaInP and InP subcells as well as the connecting Esaki tunnel diode are all realized within the same NW. By processing GaInP/InP tandem-junction NW solar cells with varying compositions of the top junction GaInP material, we investigate the impact of the GaInP composition on the device performance. External quantum efficiency (EQE) measurements on devices with varying GaInP composition provide insights into the performance of the respective subcells, revealing that the GaInP subcell is current-limiting for all devices. I-V measurements under AM1.5G illumination confirm voltage addition of the subcells, resulting in an open-circuit voltage of up to 1.91 V. However, the short-circuit current density is low, ranging between 0.24 and 3.44 mA/cm2, which leads to a resulting solar conversion efficiency of up to 3.60%. Our work shows a path forward toward high-efficiency NW photovoltaics and identifies critical issues that need improvement.