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Academic Journal

The low temperature limit of the excitonic Mott density in GaN: an experimental reassessment

Subjects: excitonic Mott transition; semiconductors; GaN

  • Source: ISSN: 1367-2630 ; New Journal of Physics ; https://cnrs.hal.science/hal-03617195 ; New Journal of Physics, 2022, 24, pp.033031. ⟨10.1088/1367-2630/ac58b9⟩.

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Academic Journal

Characterization of B-doped polycrystalline diamond films using thermally stimulated luminescence

Subjects: Boron; CVD; Quantity ratio

  • Source: ISSN: 0925-9635 ; Diamond and Related Materials ; https://hal.science/hal-00438282 ; Diamond and Related Materials, 2007, 16 (4-7), pp.805-808. ⟨10.1016/j.diamond.2006.11.089⟩.

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