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Academic Journal

An accurate approach for modeling I-V characteristics of photovoltaic generators based on the two-diode model

Authors : Tifidat, Kawtar; Maouhoub, Noureddine; Benahmida, Abdelaaziz

Source: Energy Conversion and Management: X ; volume 14, page 100205 ; ISSN 2590-1745

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Academic Journal

Fault diagnosis of photovoltaic panels using full I–V characteristics and machine learning techniques

Authors : Li, Baojie; Delpha, Claude; Migan-Dubois, Anne

Source: Energy Conversion and Management ; volume 248, page 114785 ; ISSN 0196-8904

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Academic Journal

Corrigendum to “Combined ab-initio and Schrödinger-Poisson simulation study of spontaneous and piezoelectric polarizations effects on I–V characteristics of ZnO/MgxZn1-xO heterostructures”, [Comput. Condens. Matter, December (2019) e00430]

Authors : Adi, S. Ait; Kadri, A.; Zitouni, K.

Source: Computational Condensed Matter ; volume 22, page e00450 ; ISSN 2352-2143

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Academic Journal

Accurate modeling of photovoltaic modules using a 1-D deep residual network based on I-V characteristics

Authors : Chen, Zhicong; Chen, Yixiang; Wu, Lijun ...

Source: Energy Conversion and Management ; volume 186, page 168-187 ; ISSN 0196-8904

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Academic Journal

Data on the I–V characteristics related to the SM55 monocrystalline PV module at various solar irradiance and temperatures

Authors : Chaibi, Yassine; Malvoni, Maria; Allouhi, Amine

Source: Data in Brief ; volume 26, page 104527 ; ISSN 2352-3409

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Academic Journal

Effects of oxygen and moisture on the I-V characteristics of TiO2 thin films

Authors : Lu, Wanheng; Wong, Lai-Mun; Wang, Shijie ...

Source: Journal of Materiomics ; volume 4, issue 3, page 228-237 ; ISSN 2352-8478

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Academic Journal

I-V Characteristics of Disordered Organic Layers, on the Base of Transport Level Concept

Authors : Nikitenko, V.R.; Saunina, A.Y.

Source: Physics Procedia ; volume 72, page 438-443 ; ISSN 1875-3892

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Academic Journal

Ru/Ti Schottky Contacts on N-type In-P (100): Temperature Dependence of Current-Voltage (I-V) Characteristics

Authors : Reddy, V. Rajagopal; Reddy, Y. Munikrishna; Padmasuvarna, R.

Source: Procedia Materials Science ; volume 10, page 666-672 ; ISSN 2211-8128

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Academic Journal

Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics

Authors : Adjaye, J.; Mazzola, M.S.

Source: Physics Procedia ; volume 25, page 158-169 ; ISSN 1875-3892

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Academic Journal

Solar Cells Parameters Evaluation from Dark I-V Characteristics

Authors : Bouzidi, K.; Chegaar, M.; Aillerie, M.

Source: Energy Procedia ; volume 18, page 1601-1610 ; ISSN 1876-6102

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