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Collection : Supelec (Ecole Superieure D'electricite)

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Dissertation/ Thesis

Material characterizations and devices tests of solar cells based on III-V elements nitrides ; Caractérisations de matériaux et tests de composants des cellules solaires à base des nitrures des éléments III-V

Authors : Gorge, Vanessa;

Subjects: Indium gallium nitride; InGaN; Solar cell

Source: https://theses.hal.science/tel-00707717 ; Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2012. Français. ⟨NNT : 2012PA112076⟩.

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Academic Journal

MOVPE grown periodic AlN/BAlN heterostructure with high boron content

Authors : Li, Xin; Sundaram, Suresh; El-Gmili, Youssef ...

Subjects: MOVPE; III-nitrides; Boron

Source: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-01212596 ; Journal of Crystal Growth, 2015, 414, pp.119-122. ⟨10.1016/j.jcrysgro.2014.09.030⟩.

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Academic Journal

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm

Authors : Li, Xin; Le Gac, G.; Bouchoule, Sophie ...

Subjects: Defects; Metalorganic vapor phase epitaxy; Quantum wells

Source: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-01212591 ; Journal of Crystal Growth, 2015, 432, pp.37-44. ⟨10.1016/j.jcrysgro.2015.09.013⟩.

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Academic Journal

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

Authors : Goh, W.H.; Patriarche, G.; Bonanno, P.L. ...

Subjects: Nanostructures; Metalorganic vapor phase epitaxy; Selective area growth

Source: ISSN: 0022-0248 ; Journal of Crystal Growth ; https://hal.science/hal-00554254 ; Journal of Crystal Growth, 2011, 315 (1), pp.160-163. ⟨10.1016/j.jcrysgro.2010.08.053⟩.

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Academic Journal

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Authors : Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B. ...

Subjects: [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]

Source: ISSN: 0003-6951.

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