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Collection : Universite De Lyon
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Conference

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Subjects: Power Semiconductor Device; Silicon Carbide (SiC); Bipolar Junction TransistorLyon; France

  • Source: Proceedings of the 2020 22nd European Conference on Power Electronics and Applications ; EPE’20 ECCE Europe ; https://hal.science/hal-02945919 ; EPE’20 ECCE Europe, Sep 2020, Lyon, France.

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Conference

Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications

Subjects: Gallium Nitride (GaN); Switching losses; Device characterisationGhent; Belgium

  • Source: Proceedings of the 2021 23rd European Conference on Power Electronics and Applications ; EPE'21 ECCE Europe ; https://hal.science/hal-03260519 ; EPE'21 ECCE Europe, Sep 2021, Ghent, Belgium.

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Conference

How Good are the Design Tools in Power Electronics?

Subjects: Virtual prototyping; Silicon Carbide (SiC); TransformerFranceLyon (Virtual conference), France

  • Source: Proceedings of the 2020 22nd European Conference on Power Electronics and Applications ; EPE’20 ECCE Europe ; https://hal.science/hal-02968867 ; EPE’20 ECCE Europe, Sep 2020, Lyon (Virtual

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Conference

Experimental EMI study of a 3-phase 100kW 1200V Dual Active Bridge Converter using SiC MOSFETs

Subjects: Electromagnetic Compatibility; Electromagntic Interferences; Converter circuitLyon; France

  • Source: Proceedings of the 2020 22nd European Conference on Power Electronics and Applications ; EPE'20 ECCE Europe ; https://hal.science/hal-02987216 ; EPE'20 ECCE Europe, Sep 2020, Lyon, France. 10 p.,

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Conference

Experimental validation and comparison of a SiC MOSFET based 100 kW 1.2 kV 20 kHz three-phase dual active bridge converter using two vector groups

Subjects: High Voltage power converter; Voltage Source Converter (VSC); MOSFETLyon ( virtual ); France

  • Source: Proceedings of the 2020 22nd European Conference on Power Electronics and Applications ; EPE’20 ECCE Europe ; https://hal.science/hal-02973471 ; EPE’20 ECCE Europe, Sep 2020, Lyon ( virtual ),

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Academic Journal

SiC MOSFETs robustness for diode-less applications

Subjects: robustness; threshold voltage; reliability

  • Source: ISSN: 0939-8368.

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Conference

Emergence of SiC Thyristors Featuring Amplifying Gate Design

Subjects: high-power semiconductor devices; silicon carbide (SiC) bipolar devices; amplifying gateWashington DC; United StatesWashington DC, United States

  • Source: International Conference on Silicon Carbide and Related Materials ; https://hal.science/hal-02004843 ; International Conference on

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Academic Journal

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p ++ Emitters

Subjects: Silicon Carbide (SiC); Vapor Liquid Solid (VLS); p++ Doping

  • Source: ISSN: 0255-5476.

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Academic Journal

Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications

Subjects: peripheral protection; high voltage; Silicon Carbide (SiC)

  • Source: ISSN: 0255-5476.

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Academic Journal

Thermal Stability of Silicon Carbide Power JFETs

Subjects: silicon carbide (SiC); JFET; thermal runaway

  • Source: ISSN: 0018-9383 ; IEEE Transactions on Electron Devices ; https://hal.science/hal-00881667 ; IEEE Transactions on Electron Devices, 2013, 60 (12), pp.4191 - 4198.

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  • 1-10 of  63 results for ""Silicon Carbide (SiC""