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Conference

Comparison of One and Two Stage RF Rectifiers Designed in FDSOI 28 nm and BiCMOS 55 nm

Subjects: Radio-frequency energy harvesting; FDSOI 28 nm; dynamic back gate polarizationGrenoble; France

  • Source: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)https://hal.science/hal-033471602019 Joint International EUROSOI

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  • 1-6 of  6 results for ""I V characteristics""