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Different routes to the formation of C54TiSi(2) in the presence of surface and interface molybdenum : A transmission electron microscopy study

Subjects: transformation temperature; interposed layer; phase-formation

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Formation of C54TiSi(2) : Effects of niobium additions on the apparent activation energy

Subjects: tisi2 thin-films; c54 phase-transformation; resistance measurements

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Influence of molybdenum on the formation of C54TiSi(2) : Template phenomenon versus grain-size effect

Subjects: c49 tisi2; transformation temperature; interposed layer

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XAFS spectrum of Titanium silicide

Subjects: collection - MDR XAFS DB; XAFS; SPring-8

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Modelling and Characterization of a 14 nm Planar p-Type MOSFET Device

Subjects: 14nm p-type transistor; high-k dielectrics; metal gate

• Source: International Journal of Integrated Engineering; Vol. 7 No. 3 (2015); 2600-7916; 2229-838X

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Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1-uGeu film

Subjects: thin-films; phase-stability; nickel

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Metal silicides in CMOS technology : Past, present, and future trends

Subjects: chemical-vapor-deposition; ion-beam synthesis; x-ray-diffraction

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Cross-sectional transmission electron microscopy study of the influence of niobium on the formation of titanium silicide in small-feature contacts

Subjects: tisi2; transformation; c54

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Formation of C54TiSi(2) on Si(100) using Ti/Mo and Mo/Ti bilayers

Subjects: interposed layer; c54 phase; temperature

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Effects of substrate bias and temperature during titanium sputter-deposition on the phase formation in TiSi2

Subjects: titanium disilicide; TiSi2; substrate bias

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