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Hydrogen-impurity-induced unconventional magnetism in semiconducting molybdenum ditelluride

• Authors : Jonas A. Krieger; Daniel Tay; Igor P. Rusinov

Subjects: Electronic structure; Impurities; Magnetism

• Source: Physical Review Materials, 7 (4)

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Hydrogen-impurity-induced unconventional magnetism in semiconducting molybdenum ditelluride

• Authors : Krieger, Jonas; id_orcid:0 000-0003-3337-5530; Tay, Daniel

Subjects: Electronic structure; Impurities; Magnetism

• Source: Physical Review Materials, 7 (4)

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CVD金刚石薄膜亚表面层氢杂质对表面 活化反应的影响.

• Authors : 简小刚¹ ; 唐金篧¹; 马千里¹

• Source: Journal of Synthetic Crystals. Feb2021, Vol. 50 Issue 2, p302-309. 8p.

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Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

• Authors : Luis Villamagua; Arvids Stashans; Manuela Carini

Subjects: Crystallographic defect; Computational chemistry; Advanced Materials for Smart Windows

• Source: AIP Advances, Vol 6, Iss 11, Pp 115217-115217-6 (2016)

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First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack

• Authors : Broqvist, Peter; Alkauskas, Audrius; Godet, Julien

Subjects: semiconductor-insulator boundaries; hafnium compounds; Silicon

• Source: Journal of Applied Physics. 105

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First-Principles Study of Band Alignment and Electronic Structure at Metal/Oxide Interfaces: An Investigation of Dielectric Breakdown

• Authors : Huang, Jianqiu;

Subjects: Density Functional Theory; electronic structure; band alignment

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Diluted magnetic semiconductors for spin transistors

• Authors : Al Assadi, Mohammad Hussein Naseef

Subjects: Zinc Oxide; Diluted Magnetic Semiconductors; 7. Clean energy

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