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A gate-tunable symmetric bipolar junction transistor fabricatedviafemtosecond laser processing

Subjects: Photocurrent; Materials science; business.industry

  • Source: Nanoscale Advances. 2:1733-1740

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Experimental verification of the physics and structure of the Bipolar Junction Transistor

Subjects: Physics; Heterostructure-emitter bipolar transistor; business.industry

  • Source: E-Prints Complutense. Archivo Institucional de la UCMinstnameE-Prints Complutense: Archivo Institucional de la UCMUniversidad Complutense de Madrid

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Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor

Subjects: Materials science; business.industry; Heterostructure-emitter bipolar transistor

  • Source: Electronics Letters. 40:1381

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Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench

Subjects: Physics; Bipolar junction transistor; Doping

  • Source: IEEE Journal of the Electron Devices Society, Vol 9, Pp 704-712 (2021)

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A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Subjects: injection enhancement effect; Control and Optimization; Materials science

  • Source: Energies, Vol 14, Iss 82, p 82 (2021)EnergiesVolume 14Issue 1

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Fabrication of IGBTs using 300 mm magnetic Czochralski substrates

Subjects: Fabrication; Materials science; Silicon

  • Source: IET Power Electronics. 12:3870-3873

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Soft‐punch‐through buffer concept for 600–1200 V IGBTs

Subjects: Materials science; business.industry; 020209 energy

  • Source: IET Power Electronics. 12:3874-3881

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Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications

Subjects: 010302 applied physics; Materials science; business.industry

  • Source: Gupta, G, D. Thammaiah, S, Nanver, L K & Hueting, R J 2020, ' Investigation of Pd/MoO x /n-Si diodes for bipolar transistor and

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Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs

Subjects: SiC; Materials science; Silicon

  • Source: Crystals, Vol 10, Iss 417, p 417 (2020)CrystalsVolume 10Issue 5

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On the Base Current Components in SOI Symmetric Lateral Bipolar Transistors

Subjects: symmetric junction; Materials science; Heterostructure-emitter bipolar transistor

  • Source: IEEE Journal of the Electron Devices Society, Vol 4, Iss 3, Pp 116-123 (2016)

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  • 1-10 of  132 results for ""Bipolar junction transistor""