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Phenomenological Model of Gate-Dependent Kink in I-V Characteristics of MoS2 Double-Gate FETs

Subjects: Materials science; Band gap; interface states

  • Source: IEEE Journal of the Electron Devices Society, Vol 9, Pp 441-446 (2021)

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S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities

Subjects: Materials science; Condensed matter physics; Computer simulation

  • Source: Semiconductors. 54:567-574

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FABRICATION AND I-V CHARACTERISTICS OF p-Si/n-ZnO:Er HETEROJUNCTIONS

Subjects: Fabrication; Materials science; Equivalent series resistance

  • Source: Volume: 20, Issue: 92-98Eskişehir Technical University Journal of Science and Technology A-Applied Sciences and Engineering

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I-V characteristics of graphene nanoribbon/h-BN heterojunctions and resonant tunneling

Subjects: Materials science; FOS: Physical sciences; 02 engineering and technology

  • Source: Journal of physics. Condensed matter : an Institute of Physics journal. 30(26)

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Electronic Structure and I-V Characteristics of InSe Nanoribbons

Subjects: InSe monolayer nanoribbon; Electronic structure; Materials science

  • Source: Nanoscale Research LettersNanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)

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Ru/Ti Schottky Contacts on N-type In-P (100): Temperature Dependence of Current-Voltage (I-V) Characteristics

Subjects: Range (particle radiation); Materials science; Equivalent series resistance

  • Source: Procedia Materials Science. 10:666-672

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Determination of the diffusion length of minority charge carriers in a semiconductor from the dynamic nonequilibrium I–V characteristics of MIS structures

Subjects: Materials science; Condensed matter physics; Silicon

  • Source: Semiconductors. 48:875-882

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I-V characteristics of a piezoelectric semiconductor nanofiber under local tensile/compressive stress

Subjects: 010302 applied physics; Materials science; business.industry

  • Source: Journal of Applied Physics. 126:164902

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Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts

Subjects: Condensed matter physics; Chemistry; business.industry

  • Source: Journal of Alloys and Compounds. 484:870-876

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Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode

Subjects: Auger effect; Chemistry; business.industry

  • Source: Semiconductors. 43:1198-1204

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  • 1-10 of  221 results for ""I V characteristics""