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Academic Journal

Simple and efficient estimation of photovoltaic cells and modules parameters using approximation and correction technique.

Authors : Muhammad, Fahmi F.¹ ; Karim Sangawi, Ali W.²; Hashim, Suhairul^1,3

Subjects: *PHOTOVOLTAIC cells; *SOLAR cells; *APPLICATION softwareFRANCE

Source: PLoS ONE. 5/2/2019, Vol. 14 Issue 5, p1-19. 19p.

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Conference

Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology

Authors : Gay, Romeric; Marca, Vincenzo Della; Aziza, Hassen ...

Subjects: Multi-gate; Triple gate transistor; Dual gate transistorMontpellier; France

Source: 2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)https://hal.science/hal-035023602021 16th International Conference on Design &

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Conference

Comparison of One and Two Stage RF Rectifiers Designed in FDSOI 28 nm and BiCMOS 55 nm

Authors : Awad, M.; Benech, P.; Corrao, Nicolas ...

Subjects: Radio-frequency energy harvesting; FDSOI 28 nm; dynamic back gate polarizationGrenoble; France

Source: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)https://hal.science/hal-033471602019 Joint International EUROSOI

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Conference

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

Authors : Rzin, Mehdi; Meneghini, Matteo; Rampazzo, Fabiana ...

Subjects: [SPI]Engineering Sciences [physics]Toulouse; France

Source: 2019 ESREF proceeding30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysishttps://hal.science/hal-0304872630th European Symposium on Reliability of

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Conference

Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experiment

Authors : Borga, Matteo; Meneghini, Matteo; Benazzi, Davide ...

Subjects: [SPI]Engineering Sciences [physics]Toulouse; France

Source: 2019 ESREF proceeding30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysishttps://hal.science/hal-0304819430th European Symposium on Reliability of

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Conference

Characterization and modeling of 1200V – 100A N – channel 4H-SiC MOSFET

Authors : Dang, Dinh-Lam; Guichard, Sophie; Urbain, Matthieu ...

Subjects: [SPI]Engineering Sciences [physics]Grenoble; France

Source: Symposium de Genie Electrique ; https://hal.science/hal-01361697 ; Symposium de Genie Electrique, Jun 2016, Grenoble, France

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Conference

Bulk superconducting MgB2: pinning by grain boundaries or point defects?

Authors : Wiederhold, Alex; Koblischka, Michael, Rudolf; Miryala, Muralidhar ...

Subjects: supermagnets; MgB2; flux pinning forcesNancy; France

Source: NanoMaterials 2014 (MSnows 2014 and TransNano Forum) ; https://hal.science/hal-01060255 ; NanoMaterials 2014 (MSnows 2014 and TransNano Forum), Sep 2014, Nancy, France.

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Conference

Monitoring and Analysis of Two Grid Connected PV Systems

Authors : Bressan, Michaël; Dupé, Valérie; Jammes, Bruno ...

Subjects: [SPI.TRON]Engineering Sciences [physics]/Electronics; [SPI.NRJ]Engineering Sciences [physics]/Electric powerParis; France

Source: PVSEC proceedings ; PVSEC ; https://hal.science/hal-00924619 ; PVSEC, Sep 2013, Paris, France. pp.1-5

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