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Academic Journal

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Authors : Qifeng Lu; Yifei Mu; Joseph W. Roberts

Subjects: Ge substrate; titanium-doped hafnium oxide; XPS

Source: Materials, Vol 8, Iss 12, Pp 8169-8182 (2015)

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Academic Journal

Electrical Properties and Interfacial Studies of HfxTi1-xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates.

Authors : Qifeng Lu¹ ; Yifei Mu¹ ; Roberts, Joseph W.²

Source: Materials (1996-1944). Dec2015, Vol. 8 Issue 12, p8169-8182. 14p. 1 Color Photograph, 1 Diagram, 1 Chart, 9 Graphs.

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Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Authors : Cezhou Zhao; Li Yang; Vinod R. Dhanak

Subjects: Materials science; XRD; Oxide

Source: Materials; Volume 8; Issue 12; Pages: 8169-8182MaterialsVolume 8Issue 12Pages 8169-8182MATERIALSMaterials, Vol 8, Iss 12, Pp 8169-8182 (2015)

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