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POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC) SEMICONDUCTOR BODY

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VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE (SIC) SEMICONDUCTOR BODY

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SUBSTRATE COATED WITH A SILICON-CARBIDE (SIC) LAYER AND A METHOD OF MANUFACTURING THE SAME

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POLYAMIDE-FUNCTIONALIZED SILICON CARBIDE (SIC) NANOPARTICLES-BASED CERAMIC MEMBRANE FOR SEPARATING AN OIL AND WATER MIXTURE

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Boosting Reliability: A Comparative Study of Silicon Carbide (Sic) and Silicon (Si) in Boost Converter Design Using MIL-HDBK-217 Standards

• Authors : Bouchetob, Elaid; Nadji, Bouchra

Subjects: Boost converter; text; info:eu-repo/semantics/article

• Source: International journal of electrical and computer engineering systems; ISSN 1847-6996 (Print); ISSN 1847-7003 (Online); Volume 15; Issue 4

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Studying The Effect of Gamma Rays on The Impact Strength and Wear Properties of Silicon Carbide SIC and Graphite Gr Nanocomposites

• Authors : Taha alqaisi; Ali Obaid; Rasha Alani

Subjects: composite materials; ،wear test; ،impact strength

• Source: مجلة جامعة الانبار للعلوم الصرفة, Vol 18, Iss 1, Pp 203-210 (2024)

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Studying The Effect of Gamma Rays on The Impact Strength and Wear Properties of Silicon Carbide SiC and Graphite Gr Nanocomposites.

• Authors : Salih, Taha Y.¹ ; Obaid, Ali K.¹; Hashim, Rasha M.¹

Subjects: *PHYSIOLOGICAL effects of gamma rays; *SILICON carbide; *GRAPHITE composites

• Source: Journal of University of Anbar for Pure Science. Jun2024, Vol. 18 Issue 1, p203-210. 8p.

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Precision Grinding Technology of Silicon Carbide (SiC) Ceramics by Longitudinal Torsional Ultrasonic Vibrations.

• Authors : Ye, Zejiu¹ (AUTHOR); Wen, Xu¹ (AUTHOR); Wan, Weiqiang¹ (AUTHOR)

• Source: Materials (1996-1944). Aug2023, Vol. 16 Issue 16, p5572. 26p.

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CHARACTERIZATION OF SILICA (SiO2) BASED ON BEACH SAND FROM SULAWESI AND SUMATRA AS SILICON CARBIDE (SiC) BASE MATERIAL.

• Authors : Rampe, Meytij Jeanne¹ ; Lombok, Johny Zeth¹; Tiwow, Vistarani Arini²

• Source: Journal of Chemical Technology & Metallurgy. 2023, Vol. 58 Issue 3, p467-476. 10p.

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VERTICAL POWER SEMICONDUCTOR DEVICE INCLUDING A SILICON CARBIDE (SIC) SEMICONDUCTOR BODY

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